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MA4E2508 Series
SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
Features
* Extremely Low Parasitic Capitance & Inductance * Surface Mountable in Microwave Circuits, No Wirebonds Required * Rugged HMIC Construction with polyimide Scratch Protection * Reliable, Multilayer Metalization with a Diffusion Barrier, 100 % Stabilization Bake (300C, 16 hours) * Lower Susceptibility to ESD Damage
M/A-COM Products
Rev. V3
Case Style 1112
A
B
Description
The MA4E2508 SURMOUNTTM Anti-Parallel Diode Series are Silicon Low, Medium, & High Barrier Schottky Devices fabricated with the patented Heterolithic Microwave Integrated Circuit (HMIC) process. HMIC circuits consist of Silicon pedestals which form diodes or via conductors embedded in a glass dielectric, which acts as the low dispersion, low loss, microstrip transmission medium. The combination of silicon and glass allows HMIC devices to have excellent loss and power dissipation characteristics in a low profile, reliable device. The Surmount Schottky devices are excellent choices for circuits requiring the small parasitics of a beam lead device coupled with the superior mechanical performance of a chip. The SurMount structure employs very low resistance silicon vias to connect the Schottky contacts to the metalized mounting pads on the bottom surface of the chip. These devices are reliable, repeatable, and a lower cost performance solution to conventional devices. They have lower susceptibility to electrostatic discharge than conventional beam lead Schottky diodes. The multi-layer metalization employed in the fabrication of the Surmount Schottky junctions includes a platinum diffusion barrier, which permits all devices to be subjected to a 16-hour non-operating stabilization bake at 300C. The "0502" outline allows for Surface Mount placement and multi- functional polarity orientations.
C
D
E
D
Case Style 1112
DIM
A B C D Sq. E
INCHES MIN.
0.0445 0.0169 0.0040 0.0128 0.0128
MILLIMETERS MIN.
1.130 0.430 0.102 0.325 0.325
MAX.
0.0465 0.0189 0.0080 0.0148 0.0148
MAX.
1.180 0.480 0.203 0.375 0.375
Equivalent Circuit
1
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MA-COM Technical Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
MA4E2508 Series
SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
Electrical Specifications @ 25C 1,2
Model Number
MA4E2508L MA4E2508M MA4E2508H
M/A-COM Products
Rev. V3
Type
Recommended Freq. Range
DC - 18 GHz DC - 18 GHz DC - 18 GHz
Vf @ 1 mA (mV)
330 Max 300 Typ 470 Max 420 Typ 700 Max 650 Typ
Ct @ 0 V (pF)
0.24 Max 0.18 Typ 0.24 Max 0.18 Typ 0.24 Max 0.18 Typ
Rt Slope Resistance (Vf1 - Vf2) / (10.5 mA - 9.5 mA) ()
16 Typical 20 Max 12 Typical 18 Max 6 Typical 8 Max
Low Barrier Medium Barrier High Barrier
1. Rt is the dynamic slope resistance where Rt = Rs + Rj, where Rj = 26 / Idc (Idc is in mA) and Rs is the ohmic resistance. 2. Max forward voltage difference Vf @ 1mA: 10mV
Applications
The MA4E2508 Family of Surmount Schottky diodes are recommended for use in microwave circuits through Ku band frequencies for lower power applications such as mixers, sub-harmonic mixers, detectors and limiters. The HMIC construction facilitates the direct replacement of more fragile beam lead diodes with the corresponding Surmount diode, which can be connected to a hard or soft substrate circuit with solder.
Absolute Maximum Ratings @ 25C (unless otherwise noted) 1
Parameter
Operating Temperature Storage Temperature Junction Temperature Forward Current Reverse Voltage RF C.W. Incident Power
Absolute Maximum
-40C to +125C -40C to +150C +175C 20 mA 5V +20 dBm 50 mW Class 0
Handling
All semiconductor chips should be handled with care to avoid damage or contamination from perspiration and skin oils. The use of plastic tipped tweezers or vacuum pickups is strongly recommended for individual components. The top surface of the die has a protective polyimide coating to minimize the damage. The rugged construction of these Surmount devices allows the use of standard handling and die attach techniques. It is important to note that industry standard electrostatic discharge (ESD) control is required at all times, due to the sensitive nature of Schottky junctions. Bulk handling should insure that abrasion and mechanical shock are minimized.
1. 2.
RF & DC Dissipated Power Electrostatic Discharge 2 ( ESD ) Classification damage. Human Body Model
Exceeding any of these values may cause permanent
Die Bonding
For hard substrates, we recommend utilizing a vacuum tip and force of 60 to 100 grams applied uniformly to the top surface of the device, using a hot gas bonder with equal heat applied across the bottom mounting pads of the device. When soldering to soft substrates, it is recommended to use a lead-tin interface at the circuit board mounting pads. Position the die so that its mounting pads are aligned with the circuit board mounting pads. Reflow the solder paste by applying equal heat to the circuit at both die-mounting pads. The solder joint must not be made one at a time, creating un-equal heat flow and thermal stress. Solder reflow should not be performed by causing heat to flow through the top surface of the die. Since the HMIC glass is transparent, the edges of the mounting pads can be visually inspected through the die after die attach is completed.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MA-COM Technical Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
Die Bonding
Die attach for these devices is made simple through the use of surface mount die attach technology. Mounting pads are conveniently located on the bottom surface of these devices, and are opposite the active junction. The devices are well suited for higher temperature solder attachment onto hard substrates. 80Au/20Sn and Sn63/Pb37 solders are acceptable for usage.
2
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
MA4E2508 Series
SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
MA4E2508L Low Barrier SPICE PARAMETERS (Per Diode) 4
Is (nA)
26
M/A-COM Products
Rev. V3
Rs ()
12.8
N
1.20
Cj0 (pF)
1.0 E-2
M
0.5
Ik (mA)
14
Cjpar (pF)
9.0 E-2
Vj (V)
8.0 E-2
FC
0.5
BV (V)
5.0
IBV (mA)
1.0 E-2
MA4E2508M Medium Barrier SPICE PARAMETERS (Per Diode) 4
Is (nA)
5.0 E-1
Rs ()
9.6
N
1.20
Cj0 (pF)
1.0 E-2
M
0.5
Ik (mA)
10
Cpar (pF)
9.0 E-2
Vj (V)
8.0 E-2
FC
0.5
BV (V)
5.0
IBV (mA)
1.0 E-2
MA4E2508H High Barrier SPICE PARAMETERS
Is (nA)
5.7 E-2
Rs ()
6.5
N
1.20
Cj0 (pF)
1.0 E-2
M
0.5
Ik (mA)
4
Cpar (pF)
9.0 E-2
Vj (V)
8.0 E-2
FC
0.5
BV (V)
5.0
IBV (mA)
1.0 E-2
4. Spice parameters (Per Diode) are based on the MA4E2502 Series datasheet.
Circuit Mounting Dimensions (Inches)
0.020 0.020
0.020
0.020
0.013
Ordering Information
Part Number
MA4E2508L-1112W MA4E2508L-1112 MA4E2508L-1112T MA4E2508M-1112W MA4E2508M-1112 MA4E2508MSP-T MA4E2508H-1112W MA4E2508H-1112 MADS-002508-1112HT 3
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
Packaging
Wafer on Frame Die in Carrier Tape/Reel Wafer on Frame Die in Carrier Tape/Reel Wafer on Frame Die in Carrier Tape/Reel
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MA-COM Technical Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.
MA4E2508 Series
SURMOUNTTM Low, Medium, & High Barrier Silicon Schottky Diodes: Anti-Parallel Pair
MA4E2508 Schematic Per Diode
Ct
M/A-COM Products
Rev. V3
Ls
Rs
Rj
Schematic Values per Diode
Model Number
MA4E2508L MA4E2508M MA4E2508H
Ls (nH)
0.8 0.8 0.8
Rs ()
12.8 9.6 6.5
Rj ()
26 / Idc (mA) 26 / Idc (mA) 26 / Idc (mA)
Ct (pF)
0.09 0.09 0.09
4
ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for development. Performance is based on target specifications, simulated results, and/or prototype measurements. Commitment to develop is not guaranteed. PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under development. Performance is based on engineering tests. Specifications are typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available. Commitment to produce in volume is not guaranteed.
* North America Tel: 800.366.2266 / Fax: 978.366.2266 * Europe Tel: 44.1908.574.200 / Fax: 44.1908.574.300 * Asia/Pacific Tel: 81.44.844.8296 / Fax: 81.44.844.8298 Visit www.macom.com for additional data sheets and product information. MA-COM Technical Solutions and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice.

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